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SI3865BDV-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

MOSFET; P-Ch; VDSS 1.8 to 8V; RDS(ON) 0.045Ω; ID +/-2.9A; TSOP-6; PD 0.83W; VF -0.77V

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Documentation:

SI3865BDV-T1-E3 Datasheet (2 Pages)

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SI3865BDV-T1-E3 Datasheet PDF (2 Pages)

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SI3865BDV-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOT-23-6

Power Rating

830 mW

Number of Outputs

1 Output

Output Current

2.9 A

Drain to Source Resistance (on) (Rds)

0.045 Ω

Polarity

N-Channel, P-Channel

Power Dissipation

0.83 W

Drain to Source Voltage (Vds)

8.00 V

Continuous Drain Current (Ids)

2.90 A

Output Current (Max)

2.9 A

Number of Inputs

1 Input

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

830 mW

Input Voltage

1.8V ~ 8V

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SI3865BDV-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

3.1 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃

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SI3865BDV-T1-E3 Environmental

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SI3865BDV-T1-E3 Datasheet PDF

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