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Part Datasheet Search > Power Management > VISHAY > SI3865DDV-T1-GE3 Datasheet PDF
SI3865DDV-T1-GE3
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SI3865DDV-T1-GE3 Datasheet PDF (10 Pages)
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SI3865DDV-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP-6
Number of Outputs
1 Output
Input Voltage (DC)
12.0 V
Output Current
1 A
Number of Positions
6 Position
Power Dissipation
0.83 W
Output Current (Max)
2.8 A
Output Current (Min)
1 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830 mW
Input Voltage
1.5V ~ 12V

SI3865DDV-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Width
1.7 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

SI3865DDV-T1-GE3 Documents

VISHAY
10 Pages / 0.22 MByte
VISHAY
11 Pages / 0.22 MByte

SI3865DDVT1 Documents

VISHAY
SI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor, 2.8A, 12V, 6Pin TSOP
Vishay Siliconix
SI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor, 2.8A, 12V, 6Pin TSOP
Vishay Semiconductor
SI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor, 2.8A, 12V, 6Pin TSOP
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