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SI4420BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R

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Documentation:

SI4420BDY-T1-GE3 Datasheet (9 Pages)

Package Outline Dimension on6 Page 7 Page

Part Numbering System on1 Page

SI4420BDY-T1-GE3 Datasheet PDF (9 Pages)

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SI4420BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.011 Ω

Polarity

N-Channel

Power Dissipation

1.4 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

13.5 A

Rise Time

11 ns

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

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SI4420BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

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SI4420BDY-T1-GE3 Environmental

SI4420BDY-T1-GE3 Documents

SI4420BDY-T1-GE3 Datasheet

Vishay Semiconductor

9 Pages / 0.24 MByte

SI4420BDY-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

9 Pages / 0.24 MByte

SI4420BDYT1 Documents

SI4420BDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 9.5A 8.5mΩ

SI4420BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55

SI4420BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55

SI4420BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 9.5A 8.5mΩ

SI4420BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

SI4420BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R

SI4420BDY-T1-GE3 Datasheet PDF

Vishay Intertechnology

SI4420BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

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