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Part Datasheet Search > MOSFETs > VISHAY > SI4463CDY-T1-GE3 Datasheet PDF
SI4463CDY-T1-GE3
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SI4463CDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4463CDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.006 Ω
Polarity
P-Channel
Power Dissipation
2.7 W
Threshold Voltage
600 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
18.6A
Rise Time
35 ns
Input Capacitance (Ciss)
4250pF @10V(Vds)
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2700 mW

SI4463CDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2500

SI4463CDY-T1-GE3 Documents

VISHAY
9 Pages / 0.21 MByte
VISHAY
53 Pages / 1.48 MByte

SI4463CDYT1 Documents

VISHAY
SOIC-8P-CH 20V 18.6A 8mΩ
Vishay Semiconductor
Trans MOSFET P-CH 20V 13.6A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET P-CHAN 2.5V SO8
Vishay Intertechnology
Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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