SI4463DY Datasheet PDF - Fairchild

●General Description

●This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

●Features

●• –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V

●                       RDS(ON) = 17.5 mΩ @ VGS = –2.5 V

●• Fast switching speed.

●• High performance trench technology for extremely low RDS(ON)

●• High power and current handling capability

●Applications

●• Power management

●• Load switch

●• Battery protection