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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4482DY Datasheet PDF
SI4482DY
Part 3D Model
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SI4482DY Datasheet PDF (5 Pages)
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SI4482DY Specifications

TYPE
DESCRIPTION
Case/Package
SO
Drain to Source Resistance (on) (Rds)
60.0 mΩ
Polarity
N-Channel
Power Dissipation
2.50 W
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
4.60 A
Rise Time
12.0 ns

SI4482DY Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete

SI4482DY Documents

Vishay Siliconix
5 Pages / 0.06 MByte

SI4482 Documents

Vishay Siliconix
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Vishay Siliconix
MOSFET 100V 4.6A 2.5W
Temic
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Visay
N-Channel 100V (D-S) MOSFET
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