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SI4490DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R

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3D Model

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Documentation:

SI4490DY-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI4490DY-T1-E3 Datasheet PDF (8 Pages)

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SI4490DY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.8 Ω

Polarity

N-Channel

Power Dissipation

1 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

4.00 A

Rise Time

20 ns

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1560 mW

View Datasheet >

SI4490DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4490DY-T1-E3 Environmental

SI4490DY-T1-E3 Function Overview

SI4490DY-T1-E3 Documents

SI4490DY-T1-E3 Datasheet

Vishay Semiconductor

8 Pages / 0.22 MByte

SI4490DY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

8 Pages / 0.22 MByte

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SOIC-8 N-CH 200V 2.85A 80mΩ

SI4490DY-T1-E3 Datasheet PDF

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SOIC-8 N-CH 200V 2.85A 80mΩ

SI4490DY-T1-GE3 Datasheet PDF

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SI4490DY-T1-E3 Datasheet PDF

Vishay Siliconix

Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R

SI4490DY-T1-E3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R

SI4490DY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET 200V 4A 3.1W 80mohm @ 10V

SI4490DY-T1-E3 Datasheet PDF

Vishay Intertechnology

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