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Part Datasheet Search > MOSFETs > VISHAY > SI4490DY-T1-GE3 Datasheet PDF
SI4490DY-T1-GE3
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SI4490DY-T1-GE3 Datasheet PDF (5 Pages)
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SI4490DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
65 mΩ
Polarity
N-Channel
Power Dissipation
3.1 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
2.85 A
Rise Time
20 ns
Input Power (Max)
1.56 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1560 mW

SI4490DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI4490DY-T1-GE3 Documents

VISHAY
5 Pages / 0.07 MByte
VISHAY
11 Pages / 0.26 MByte

SI4490DYT1 Documents

VISHAY
SOIC N-CH 200V 2.85A
VISHAY
SOIC-8 N-CH 200V 2.85A 80mΩ
VISHAY
SOIC-8 N-CH 200V 2.85A 80mΩ
Vishay Semiconductor
MOSFET 200V 4A 3.1W 80mohm @ 10V
Vishay Siliconix
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET 200V 4A 3.1W 80mohm @ 10V
Vishay Intertechnology
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