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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4532CDY-T1-GE3 Datasheet PDF
SI4532CDY-T1-GE3
Part 3D Model
$ 0.266
SI4532CDY-T1-GE3 Datasheet PDF (15 Pages)
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SI4532CDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.038 Ω
Power Dissipation
2.78 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Input Capacitance (Ciss)
305pF @15V(Vds)
Input Power (Max)
2.78 W
Operating Temperature (Max)
150 ℃

SI4532CDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4532CDY-T1-GE3 Documents

Vishay Siliconix
15 Pages / 0.28 MByte
Vishay Siliconix
15 Pages / 0.28 MByte

SI4532CDYT1 Documents

VISHAY
SOIC-8 N+P 30V 6A 38mΩ,73mΩ
Vishay Semiconductor
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8Pin SOIC N T/R
Vishay Siliconix
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor, 4.3A, 6A, 30V, 8Pin SOIC
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