SI4539DY Datasheet PDF - Fairchild

●General Description 

●These dual N-and P -Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

●Features

●N-Channel 7.0 A,30 V, RDS(ON) =0.028 W@ VGS=10 V

●                              RDS(ON)=0.040 W@ VGS= 4.5 V.

●P-Channel -5.0 A,-30 V,RDS(ON)=0.052 W @ VGS=-10 V

●                              RDS(ON)=0.080W@ VGS=-4.5 V.

●High density cell designfor extremely low RDS(ON)

●High power and current handling capability in a widely used surface mount package.

●Dual (N & P-Channel) MOSFET in surface mount package.