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SI4800DY
Part 3D Model
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SI4800DY Datasheet PDF (6 Pages)
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SI4800DY Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9A
Rise Time
8 ns
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

SI4800DY Documents

VISHAY
6 Pages / 0.08 MByte

SI4800 Documents

NXP
SO N-CH 30V 9A
Philips
N-channel enhancement mode field-effect transistor
Vishay Siliconix
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Vishay Intertechnology
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Golledge
Oscillator
VISHAY
SOIC-8 N-CH 30V 6.5A 18.5mΩ
VISHAY
SOIC-8 N-CH 30V 6.5A 18.5mΩ
Vishay Siliconix
MOSFET N-CH 30V 6.5A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC N T/R
Vishay Siliconix
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC N T/R
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