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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4816BDY-T1-GE3 Datasheet PDF
SI4816BDY-T1-GE3
Part 3D Model
$ 0.893

SI4816BDY-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:
Vishay Siliconix
Category:
MOSFETs
Case Package:
SOIC-8
Description:
MOSFET DL N-CH 30V 6.8A 8-SOIC
Pictures:
3D Model
Symbol
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Product Pictures
Documentation:
SI4816BDY-T1-GE3 Datasheet (12 Pages)
Package Outline Dimension on10 Page
Part Numbering System on1 Page
SI4816BDY-T1-GE3 Datasheet PDF (12 Pages)
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SI4816BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.0155 Ω
Polarity
N-Channel, Dual N-Channel
Power Dissipation
1.25 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Input Power (Max)
1W, 1.25W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
View Datasheet >

SI4816BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

SI4816BDY-T1-GE3 Documents

SI4816BDY-T1-GE3 Datasheet
Vishay Siliconix
12 Pages / 0.18 MByte
SI4816BDY-T1-GE3 Other Datasheet PDF
Vishay Siliconix
12 Pages / 0.18 MByte

SI4816BDYT1 Documents

SI4816BDY-T1-GE3 Datasheet PDF
VISHAY
SOIC-8 Dual N 30V 5.8A 15.5mΩ,9.3mΩ
SI4816BDY-T1-E3 Datasheet PDF
VISHAY
SOIC-8 Dual N 30V 5.8A 18.5mΩ,11.5mΩ
SI4816BDY-T1-GE3 Datasheet PDF
Vishay Siliconix
MOSFET DL N-CH 30V 6.8A 8-SOIC
SI4816BDY-T1-E3 Datasheet PDF
Vishay Siliconix
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
SI4816BDY-T1-GE3 Datasheet PDF
Vishay Semiconductor
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
SI4816BDY-T1-E3 Datasheet PDF
Vishay Semiconductor
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
SI4816BDY-T1-E3 Datasheet PDF
Vishay Intertechnology
SI4816BDY-T1-E3/BKN Datasheet PDF
Vishay Siliconix
DUAL N-CH 30V (D-S) MOSFET W/SCHOT
SI4816BDY-T1-E3/BKN Datasheet PDF
Vishay Semiconductor
DUAL N-CH 30V (D-S) MOSFET W/SCHOT
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