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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4816DY-T1-E3 Datasheet PDF
SI4816DY-T1-E3
Part 3D Model
$ 2.158
SI4816DY-T1-E3 Datasheet PDF (9 Pages)
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SI4816DY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
22.0 mΩ
Polarity
Dual N-Channel
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Gate to Source)
20.0 V
Continuous Drain Current (Ids)
5.30 A
Input Power (Max)
1W, 1.25W

SI4816DY-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4816DY-T1-E3 Documents

Vishay Siliconix
9 Pages / 0.13 MByte
Vishay Siliconix
9 Pages / 0.13 MByte

SI4816DYT1 Documents

Vishay Siliconix
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Vishay Siliconix
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
Vishay Semiconductor
Trans MOSFET N-CH 30V 5.3A/7.7A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET N-CH DUAL 30V 8-SOIC
Vishay Semiconductor
MOSFET 2N-CH 30V 5.3A 8-SOIC
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