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SI4836DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

Description:

Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R

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SI4836DY-T1-E3 Datasheet PDF (5 Pages)

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SI4836DY-T1-E3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

Drain to Source Resistance (on) (Rds)

3.00 mΩ

Polarity

N-Channel

Power Dissipation

1.60 W

Breakdown Voltage (Drain to Source)

12.0 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

25.0 A

Rise Time

41 ns

Fall Time

115 ns

SI4836DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Operating Temperature

-55℃ ~ 150℃

SI4836DY-T1-E3 Environmental

SI4836DY-T1-E3 Documents

SI4836DY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

5 Pages / 0.07 MByte

SI4836DYT1 Documents

SI4836DY-T1-E3 Datasheet PDF

VISHAY

Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R

SI4836DY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

SI4836DY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

SI4836DY-T1-E3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R

SI4836DY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 12V 17A 8-SOIC

SI4836DY-T1-E3 Datasheet PDF

Vishay Intertechnology

SI4836DYT1E3 Datasheet PDF

Vishay Semiconductor

SOP-8

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