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SI4850EY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2

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Documentation:

SI4850EY-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on7 Page

SI4850EY-T1-E3 Datasheet PDF (8 Pages)

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SI4850EY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Voltage Rating (DC)

60.0 V

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.018 Ω

Polarity

N-Channel

Power Dissipation

1.7 W

Threshold Voltage

1 V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

8.50 A

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.7 W

View Datasheet >

SI4850EY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

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SI4850EY-T1-E3 Environmental

SI4850EY-T1-E3 Export Classifications

SI4850EY-T1-E3 Function Overview

SI4850EY-T1-E3 Documents

SI4850EY-T1-E3 Datasheet

Vishay Semiconductor

8 Pages / 0.59 MByte

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