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Part Datasheet Search > MOSFETs > VISHAY > SI4888DY-T1 Datasheet PDF
SI4888DY-T1
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SI4888DY-T1 Datasheet PDF (5 Pages)
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SI4888DY-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOP
Drain to Source Resistance (on) (Rds)
10.0 mΩ
Polarity
N-Channel
Power Dissipation
1.60 W
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
16.0 A
Rise Time
10 ns
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3500 mW

SI4888DY-T1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI4888DY-T1 Documents

VISHAY
5 Pages / 0.08 MByte

SI4888 Documents

Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
Vishay Siliconix
MOSFET 30V 16A 3.5W
VISHAY
SOIC N-CH 30V 11A
Vishay Siliconix
MOSFET N-CH 30V 11A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 11A 8Pin SOIC N T/R
VISHAY
Trans MOSFET N-CH 30V 11A 8Pin SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 11A 8Pin SOIC N T/R
VISHAY
SOIC N-CH 30V 11A
Vishay Intertechnology
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