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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4925DDY-T1-GE3 Datasheet PDF
SI4925DDY-T1-GE3
Part 3D Model
$ 1.337
SI4925DDY-T1-GE3 Datasheet PDF (10 Pages)
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SI4925DDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.024 Ω
Power Dissipation
5 W
Drain to Source Voltage (Vds)
30 V
Rise Time
8 ns
Input Capacitance (Ciss)
1350pF @15V(Vds)
Input Power (Max)
5 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI4925DDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4925DDY-T1-GE3 Documents

Vishay Siliconix
10 Pages / 0.23 MByte
Vishay Siliconix
11 Pages / 0.23 MByte

SI4925DDYT1 Documents

VISHAY
SOIC-8 Dual P 30V 7.3A 29mΩ
Vishay Siliconix
Trans MOSFET P-CH 30V 7.3A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET P-CH 30V 7.3A 8Pin SOIC N T/R
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