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Part Datasheet Search > MOSFETs > VISHAY > SI4943CDY-T1-E3 Datasheet PDF
SI4943CDY-T1-E3
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SI4943CDY-T1-E3 Datasheet PDF (9 Pages)
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SI4943CDY-T1-E3 Specifications

TYPE
DESCRIPTION
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
19.2 mΩ
Polarity
Dual P
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
8A
Input Capacitance (Ciss)
1945pF @10V(Vds)
Input Power (Max)
3.1 W
Power Dissipation (Max)
3.1 W

SI4943CDY-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
2500

SI4943CDY-T1-E3 Documents

VISHAY
9 Pages / 0.18 MByte

SI4943CDYT1 Documents

VISHAY
SOIC-8 Dual P 20V 8A 19.2mΩ
Vishay Siliconix
Dual MOSFET, Dual P Channel, -8A, -20V, 0.0275Ω, -4.5V, -1V
Vishay Siliconix
MOSFET 2P-CH 20V 8A 8-SOIC
VISHAY
SOIC-8 Dual P 20V 8A 19.2mΩ
Vishay Semiconductor
MOSFET 20V 8A 3.1W 19.2mohm @ 10V
Vishay Semiconductor
MOSFET 20V 8A 3.1W 19.2mohm @ 10V
Vishay Intertechnology
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