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SI4946BEY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC

Description:

MOSFET 60V 6.5A 3.7W 41mohm @ 10V

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Documentation:

SI4946BEY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page

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SI4946BEY-T1-GE3 Datasheet PDF (10 Pages)

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SI4946BEY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC

Power Rating

2.6 W

Drain to Source Resistance (on) (Rds)

0.033 Ω

Polarity

Dual N-Channel

Power Dissipation

3.7 W

Threshold Voltage

2.4 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

5.30 A

Input Capacitance (Ciss)

840pF @30V(Vds)

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.7 W

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SI4946BEY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-50℃ ~ 175℃

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SI4946BEY-T1-GE3 Environmental

SI4946BEY-T1-GE3 Function Overview

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SI4946BEY-T1-GE3 Datasheet PDF

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