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SI4966DY-E3
Part 3D Model
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SI4966DY-E3 Datasheet PDF (8 Pages)
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SI4966DY-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Power Rating
2 W
Polarity
N-CH
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
7.1A
Rise Time
40 ns
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

SI4966DY-E3 Documents

VISHAY
8 Pages / 0.23 MByte

SI4966 Documents

VISHAY
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Semiconductor
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
MOSFET, DUAL, NN, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: ...
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
VISHAY
SOIC N-CH 20V 7.1A
Vishay Semiconductor
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N
Vishay Siliconix
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
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