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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4966DY-T1 Datasheet PDF
SI4966DY-T1
Part 3D Model
$ 0.411
SI4966DY-T1 Datasheet PDF (5 Pages)
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SI4966DY-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Drain to Source Resistance (on) (Rds)
25.0 mΩ
Polarity
N-Channel
Power Dissipation
2.00 W
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
-7.10 A to 7.10 A

SI4966DY-T1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI4966DY-T1 Documents

Vishay Siliconix
5 Pages / 0.08 MByte

SI4966 Documents

VISHAY
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Semiconductor
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
MOSFET, DUAL, NN, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: ...
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
VISHAY
SOIC N-CH 20V 7.1A
Vishay Semiconductor
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N
Vishay Siliconix
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
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