Web Analytics
Part Datasheet Search > MOSFETs > VISHAY > SI5935CDC-T1-GE3 Datasheet PDF
SI5935CDC-T1-GE3
$ 0.212
SI5935CDC-T1-GE3 Datasheet PDF (11 Pages)
View Datasheet
Click page to view the detail

SI5935CDC-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package (SI)
3216
Case/Package
1206
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.083 Ω
Polarity
Dual P-Channel
Power Dissipation
1.3 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
3.1A
Rise Time
32 ns
Input Capacitance (Ciss)
455pF @10V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1 W

SI5935CDC-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Width
1.7 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI5935CDC-T1-GE3 Documents

VISHAY
11 Pages / 0.23 MByte
VISHAY
11 Pages / 0.19 MByte

SI5935CDCT1 Documents

VISHAY
ChipFET-8 Dual P 20V 3.1A 100mΩ
Vishay Semiconductor
VISHAY SI5935CDC-T1-GE3 Dual MOSFET, Dual P Channel, -4A, -20V, 0.13Ω, -1.8V, -400mV
Vishay Siliconix
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
ChipFET-8 Dual P 20V 3.1A 100mΩ
Vishay Siliconix
Trans MOSFET P-CH 20V 3.1A 8Pin Chip FET T/R
Vishay Semiconductor
MOSFET 20V 4A 3.1W 100mohm @ 4.5V
Part Datasheet PDF Search
Loading...
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

BOM Matching Tool
Matching parts
Alternative parts
Warning risks
Computing costs
Upload BOM File
File format: *.xlsx, *.xls, *.csv
Online 3D Gerber Viewer
Modeling in 15s
Preview PCB
40 types of layers
Preflight Risk
Upload Gerber File
Support standard RS-274X file, accept zip rar or 7z