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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI6801DQ-T1 Datasheet PDF
SI6801DQ-T1
Part 3D Model
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SI6801DQ-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TSSOP
Drain to Source Resistance (on) (Rds)
160 mΩ
Polarity
N-Channel, P-Channel
Power Dissipation
1.00 W
Breakdown Voltage (Drain to Source)
20.0 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
-1.90 A to 1.90 A

SI6801DQ-T1 Documents

Vishay Siliconix
7 Pages / 0.09 MByte
Vishay Siliconix
7 Pages / 0.1 MByte

SI6801 Documents

Vishay Siliconix
MOSFET 20V 1.9/1.7A
Vishay Siliconix
SPICE Device Model Si6801DQ
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