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Part Datasheet Search > MOSFETs > VISHAY > SI7252DP-T1-GE3 Datasheet PDF
SI7252DP-T1-GE3
$ 1.018
SI7252DP-T1-GE3 Datasheet PDF (13 Pages)
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SI7252DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerPak-Dual-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
Dual N-Channel
Power Dissipation
46 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
36.7A
Fall Time
7 ns
Operating Temperature (Max)
150 ℃

SI7252DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
3000

SI7252DP-T1-GE3 Documents

VISHAY
13 Pages / 0.36 MByte
VISHAY
13 Pages / 0.33 MByte
VISHAY
1 Pages / 0.1 MByte
VISHAY
4 Pages / 0.05 MByte

SI7252DPT1 Documents

VISHAY
PowerPak-Dual-8 Dual N 100V 36.7A 20mΩ
Vishay Siliconix
MOSFET N-CH 100V DUAL 8SOIC
Vishay Semiconductor
VISHAY SI7252DP-T1-GE3 Dual MOSFET, Dual N Channel, 36.7A, 100V, 0.014Ω, 10V, 1.5V
Vishay Intertechnology
Power Field-Effect Transistor, 36.7A I(D), 100V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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