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SI7461DP-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

VISHAY SI7461DP-T1-E3 MOSFET Transistor, P Channel, -12.6A, -60V, 190mohm, 20V, -3V

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Documentation:

SI7461DP-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page

SI7461DP-T1-E3 Datasheet PDF (8 Pages)

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SI7461DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

190 mΩ

Polarity

P-Channel

Power Dissipation

1.2 W

Drain to Source Voltage (Vds)

-60.0 V

Continuous Drain Current (Ids)

-12.6 A

Rise Time

20 ns

Fall Time

90 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

SI7461DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5.99 mm

Size-Height

1.07 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI7461DP-T1-E3 Environmental

SI7461DP-T1-E3 Function Overview

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