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SI7461DP-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8P-CH 60V 8.6A 14.5mΩ

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Documentation:

SI7461DP-T1-GE3 Datasheet (12 Pages)

Package Outline Dimension on6 Page 7 Page 8 Page

Part Numbering System on1 Page

SI7461DP-T1-GE3 Datasheet PDF (12 Pages)

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SI7461DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0115 Ω

Polarity

P-Channel

Power Dissipation

1.9 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

-14.4 A

Rise Time

20 ns

Input Power (Max)

1.9 W

Fall Time

90 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

5400 mW

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SI7461DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI7461DP-T1-GE3 Environmental

SI7461DP-T1-GE3 Export Classifications

SI7461DP-T1-GE3 Function Overview

SI7461DP-T1-GE3 Documents

SI7461DP-T1-GE3 Datasheet

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12 Pages / 0.36 MByte

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