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Part Datasheet Search > MOSFETs > VISHAY > SI7491DP-T1-GE3 Datasheet PDF
SI7491DP-T1-GE3
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SI7491DP-T1-GE3 Datasheet PDF (12 Pages)
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SI7491DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
SO-8
Polarity
P-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
11A
Rise Time
190 ns
Fall Time
90 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
5000 mW

SI7491DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI7491DP-T1-GE3 Documents

VISHAY
12 Pages / 0.3 MByte

SI7491DPT1 Documents

VISHAY
PowerPAK P-CH 30V 11A
Vishay Semiconductor
MOSFET P-CH 30V 11A PPAK SO-8
Vishay Siliconix
MOSFET P-CH 30V 11A PPAK SO-8
Vishay Semiconductor
VISHAY SI7491DP-T1-E3 MOSFET Transistor, P Channel, -11A, -30V, 0.007Ω, -4.5V, -3V
VISHAY
PowerPAK P-CH 30V 11A
Vishay Siliconix
MOSFET P-CH 30V 11A PPAK SO-8
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Vishay Intertechnology
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