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Part Datasheet Search > MOSFETs > VISHAY > SI7840DP-T1 Datasheet PDF
SI7840DP-T1
Part 3D Model
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SI7840DP-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO
Drain to Source Resistance (on) (Rds)
9.50 mΩ
Polarity
N-Channel
Power Dissipation
1.90 W
Drain to Source Voltage (Vds)
30.0 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
11.0 A

SI7840DP-T1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
2500

SI7840DP-T1 Documents

VISHAY
5 Pages / 0.05 MByte
VISHAY
5 Pages / 0.06 MByte

SI7840 Documents

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PowerPAK N-CH 30V 11A
Vishay Siliconix
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SOIC-8 N-CH 30V 11A 9.5mΩ
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PowerPAK N-CH 30V 11A
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MOSFET N-CH 30V 11A PPAK SO-8
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N-Channel 30V (D-S) Fast Switching MOSFET
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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