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SI7840DP-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

Description:

PowerPAK N-CH 30V 11A

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SI7840DP-T1-E3 Datasheet PDF (5 Pages)

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SI7840DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

Drain to Source Resistance (on) (Rds)

9.50 mΩ

Polarity

N-Channel

Power Dissipation

1.90 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

11.0 A

Rise Time

14 ns

Fall Time

19 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

5000 mW

SI7840DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

SI7840DP-T1-E3 Environmental

SI7840DP-T1-E3 Documents

SI7840DP-T1-E3 Other Datasheet PDF

VISHAY

5 Pages / 0.04 MByte

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SI7840DP-T1 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 11A 9.5mΩ

SI7840DP-T1-E3 Datasheet PDF

VISHAY

PowerPAK N-CH 30V 11A

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