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SI7844DP-T1
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SI7844DP-T1 Datasheet PDF (5 Pages)
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SI7844DP-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO
Drain to Source Resistance (on) (Rds)
30.0 mΩ
Polarity
N-Channel
Power Dissipation
1.40 W
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
6.40 A

SI7844DP-T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)

SI7844DP-T1 Documents

Vishay Siliconix
5 Pages / 0.09 MByte

SI7844 Documents

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VISHAY SI7844DP-T1-E3 Dual MOSFET, Dual N Channel, 10A, 30V, 22mohm, 10V, 2.4V
Vishay Siliconix
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Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
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Dual N-channel 30V (D-S) MOSFET
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