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SI7844DP-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SO-8

Description:

PowerPAK N-CH 30V 6.4A

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3D Model

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Documentation:

SI7844DP-T1-E3 Datasheet (5 Pages)

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SI7844DP-T1-E3 Datasheet PDF (5 Pages)

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SI7844DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SO-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.022 Ω

Polarity

Dual N-Channel

Power Dissipation

1.4 W

Threshold Voltage

2.4 V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

10 ns

Input Power (Max)

1.4 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3500 mW

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SI7844DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI7844DP-T1-E3 Environmental

SI7844DP-T1-E3 Function Overview

SI7844DP-T1-E3 Documents

SI7844DP-T1-E3 Datasheet

VISHAY

5 Pages / 0.07 MByte

SI7844DP-T1-E3 Other Datasheet PDF

VISHAY

8 Pages / 0.16 MByte

SI7844DP-T1-E3 Notice File

VISHAY

2 Pages / 0.18 MByte

SI7844DPT1 Documents

SI7844DP-T1 Datasheet PDF

Vishay Siliconix

Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8

SI7844DP-T1-E3 Datasheet PDF

VISHAY

PowerPAK N-CH 30V 6.4A

SI7844DP-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

SI7844DP-T1-E3 Datasheet PDF

Vishay Semiconductor

VISHAY SI7844DP-T1-E3 Dual MOSFET, Dual N Channel, 10A, 30V, 22mohm, 10V, 2.4V

SI7844DP-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET DL N-CH 30V PPAK 8-SOIC

SI7844DP-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 6.4A 8Pin PowerPAK SO T/R

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