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Part Datasheet Search > MOSFETs > VISHAY > SI7898DP-T1-E3 Datasheet PDF
SI7898DP-T1-E3
Part 3D Model
$ 0.761
SI7898DP-T1-E3 Datasheet PDF (6 Pages)
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SI7898DP-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.068 Ω
Polarity
N-Channel
Power Dissipation
1.9 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
3A
Rise Time
10 ns
Input Power (Max)
1.9 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1900 mW

SI7898DP-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI7898DP-T1-E3 Documents

VISHAY
6 Pages / 0.08 MByte
VISHAY
6 Pages / 0.11 MByte

SI7898DPT1 Documents

VISHAY
SOIC-8 N-CH 150V 3A 85mΩ
VISHAY
SOIC-8 N-CH 150V 3A 85mΩ
Vishay Siliconix
MOSFET N-CH 150V 3A PPAK SO-8
Vishay Semiconductor
VISHAY SI7898DP-T1-E3 MOSFET Transistor, N Channel, 4.8A, 150V, 95mohm, 20V, 4V
Vishay Semiconductor
VISHAY SI7898DP-T1-GE3 MOSFET Transistor, N Channel, 3A, 150V, 0.068Ω, 6V, 4V
Vishay Siliconix
MOSFET N-CH 150V 3A PPAK SO-8
Vishay Intertechnology
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