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SI7898DP-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC

Description:

VISHAY SI7898DP-T1-GE3 MOSFET Transistor, N Channel, 3A, 150V, 0.068Ω, 6V, 4V

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Documentation:

SI7898DP-T1-GE3 Datasheet (12 Pages)

Package Outline Dimension on6 Page 7 Page 8 Page

Part Numbering System on1 Page

SI7898DP-T1-GE3 Datasheet PDF (12 Pages)

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SI7898DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.068 Ω

Polarity

N-Channel

Power Dissipation

1.9 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

150 V

Continuous Drain Current (Ids)

3.00 A

Rise Time

10 ns

Fall Time

17 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1900 mW

View Datasheet >

SI7898DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Height

1.04 mm

Operating Temperature

-55℃ ~ 150℃

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SI7898DP-T1-GE3 Environmental

SI7898DP-T1-GE3 Function Overview

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SI7898DP-T1-GE3 Datasheet

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