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Part Datasheet Search > MOSFETs > VISHAY > SI8410DB-T2-E1 Datasheet PDF
SI8410DB-T2-E1
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SI8410DB-T2-E1 Datasheet PDF (8 Pages)
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SI8410DB-T2-E1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
BGA-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.03 Ω
Polarity
N-Channel
Power Dissipation
1.8 W
Threshold Voltage
850 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.7A
Input Capacitance (Ciss)
620pF @10V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1800 mW

SI8410DB-T2-E1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI8410DB-T2-E1 Documents

VISHAY
8 Pages / 0.15 MByte

SI8410DBT2 Documents

VISHAY
MicroFoot-4 N-CH 20V 5.7A 68mΩ
Vishay Semiconductor
VISHAY SI8410DB-T2-E1 MOSFET Transistor, N Channel, 5.7A, 20V, 0.03Ω, 4.5V, 850mV
Vishay Siliconix
MOSFET N-CH 20V MICROFOOT
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Small Signal Field-Effect Transistor
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