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SI9933CDY-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET, Dual P-CH, Vds 20V, Vgs +/- 20V, Rds(on) 48mohm, Id 4A, SO8, Pd 3.1W

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Documentation:

SI9933CDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

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SI9933CDY-T1-GE3 Datasheet PDF (10 Pages)

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SI9933CDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.094 Ω

Power Dissipation

1.14 W

Drain to Source Voltage (Vds)

20 V

Input Capacitance (Ciss)

665pF @10V(Vds)

Input Power (Max)

3.1 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

SI9933CDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

5 mm

Size-Height

1.55 mm

Operating Temperature

-50℃ ~ 150℃ (TJ)

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SI9933CDY-T1-GE3 Environmental

SI9933CDY-T1-GE3 Function Overview

SI9933CDY-T1-GE3 Documents

SI9933CDY-T1-GE3 Datasheet

Vishay Siliconix

10 Pages / 0.26 MByte

SI9933CDY-T1-GE3 Other Datasheet PDF

Vishay Siliconix

9 Pages / 0.19 MByte

SI9933CDY-T1-GE3 Other References

Vishay Siliconix

1 Pages / 0.12 MByte

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SI9933CDY-T1-GE3 Datasheet PDF

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SI9933CDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET, Dual P-CH, Vds 20V, Vgs +/- 20V, Rds(on) 48mohm, Id 4A, SO8, Pd 3.1W

SI9933CDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

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SI9933CDY-T1-E3 Datasheet PDF

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