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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SIR422DP-T1-GE3 Datasheet PDF
SIR422DP-T1-GE3
$ 0.297
SIR422DP-T1-GE3 Datasheet PDF (7 Pages)
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SIR422DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerPAKSO-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0054 Ω
Polarity
N-Channel
Power Dissipation
34.7 W
Threshold Voltage
1.2 V
Input Capacitance
1785pF @20V
Drain to Source Voltage (Vds)
40 V
Rise Time
84 ns
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SIR422DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Size-Length
5.99 mm
Size-Height
1.07 mm
Operating Temperature
-55℃ ~ 150℃

SIR422DP-T1-GE3 Documents

Vishay Semiconductor
7 Pages / 0.1 MByte
Vishay Semiconductor
13 Pages / 0.31 MByte
Vishay Semiconductor
4 Pages / 0.27 MByte

SIR422DPT1 Documents

VISHAY
SOIC-8 N-CH 40V 40A 6.6mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0054Ω; ID 20A; PowerPak SO-8; -55de
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0054Ω; ID 20A; PowerPak SO-8; -55de
Vishay Intertechnology
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