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SIR470DP-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SO-8

Description:

MOSFET N-CH 40V 60A PPAK SO-8

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SIR470DP-T1-GE3 Datasheet PDF (13 Pages)

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SIR470DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SO-8

Drain to Source Resistance (on) (Rds)

0.0019 Ω

Power Dissipation

104 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

40 V

Input Capacitance (Ciss)

5660pF @20V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

SIR470DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 150℃ (TJ)

SIR470DP-T1-GE3 Environmental

SIR470DP-T1-GE3 Function Overview

SIR470DP-T1-GE3 Documents

SIR470DP-T1-GE3 Other Datasheet PDF

Vishay Siliconix

13 Pages / 0.29 MByte

SIR470DP-T1-GE3 Notice File

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6 Pages / 0.24 MByte

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SIR470DP-T1-GE3 Datasheet PDF

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SIR470DP-T1-GE3 Datasheet PDF

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MOSFET 40V 60A 104W 2.3mohm @ 10V

SIR470DP-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

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