SKM300GB125D Datasheet PDF - Semikron

●N-Channel, 1200 V Collector-to-Emitter Voltage, Ultra Fast Insulated Gate Bipolar Transistor Module

● homogeneous Si structure (NPT - Non punch-through IGBT)

● Low inductance case

● Short low tail current with low temperature dependence

● Fast & soft inverse CAL diodes

● Isolated copper baseplate using DCB Direct Copper Bonding technology

● Large clearance (1

●For switched mode power supplies, resonant inverters up to 100 kHz, silent AC motor speed control, inductive heating, silent UPS uninterruptible power supplies, electronic welders applications.