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Part Datasheet Search > TVS Diodes > VISHAY > SM8S30AHE3_A/I Datasheet PDF
SM8S30AHE3_A/I
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SM8S30AHE3_A/I Datasheet PDF (5 Pages)
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SM8S30AHE3_A/I Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
2 Pin
Case/Package
DO-218AB
Clamping Voltage
48.4 V
Max Repetitive Reverse Voltage (Vrrm)
30V
Test Current
5 mA
Max Forward Surge Current (Ifsm)
700 A
Peak Pulse Power
6600 W
Reverse Breakdown Voltage
33.3 V
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 175℃

SM8S30AHE3_A/I Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
13.7 mm
Size-Width
8.7 mm
Size-Height
5 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

SM8S30AHE3_A/I Documents

VISHAY
5 Pages / 0.09 MByte
VISHAY
5 Pages / 0.08 MByte

SM8S30AHE3 Documents

VISHAY
Diode TVS Single Uni-Dir 30V 6.6kW 2Pin DO-218AB T/R
Vishay Semiconductor
VISHAY SM8S30AHE3/2D TVS Diode, SM8S Series, Unidirectional, 30V, 48.4V, DO-218AB, 2Pins
Vishay Semiconductor
TVS DIODE 48.4VC 136A DO-218AB
Vishay Semiconductor
Diode TVS Single Uni-Dir 30V 6.6kW 2Pin DO-218AB T/R
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