SN54BCT652JT Datasheet PDF - TI

●description

●These devices consist of bus transceiver circuits, D-type flip-flops, and control circuitry arranged for

● multiplexed transmission of data directly from the data bus or from the internal storage registers.

●State-of-the-Art BiCMOS Design Significantly Reduces ICCZ

●ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

●Independent Registers and Enables for A and B Buses

●Multiplexed Real-Time and Stored Data

●Power-Up High-Impedance Mode

●Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)