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Part Datasheet Search > High Voltage MOS > Infineon > SPB20N60C3ATMA1 Datasheet PDF
SPB20N60C3ATMA1
$ 4.635
SPB20N60C3ATMA1 Datasheet PDF (12 Pages)
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SPB20N60C3ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
650 V
Current Rating
20.7 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.19 Ω
Polarity
N-Channel
Power Dissipation
208 W
Threshold Voltage
3 V
Input Capacitance
4.50 nF
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
20.7 A
Rise Time
5 ns
Input Capacitance (Ciss)
2400pF @25V(Vds)
Fall Time
4.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
208 W

SPB20N60C3ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
11.05 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 150℃

SPB20N60C3ATMA1 Documents

Infineon
12 Pages / 0.76 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

SPB20N60C3 Documents

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D2PAK N-CH 650V 20.7A
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D2PAK N-CH 650V 20.7A
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D2PAK N-CH 650V 20.7A
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Cool MOS Power Transistor Feature new revolutionary high voltage technology
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