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Part Datasheet Search > MOSFETs > Infineon > SPB21N50C3ATMA1 Datasheet PDF
SPB21N50C3ATMA1
$ 1.522
SPB21N50C3ATMA1 Datasheet PDF (12 Pages)
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SPB21N50C3ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
560 V
Current Rating
21.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.16 Ω
Polarity
N-Channel
Power Dissipation
208 W
Threshold Voltage
3 V
Input Capacitance
2.40 nF
Gate Charge
95.0 nC
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
5 ns
Input Capacitance (Ciss)
2400pF @25V(Vds)
Fall Time
4.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
208000 mW

SPB21N50C3ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm

SPB21N50C3ATMA1 Documents

Infineon
12 Pages / 1.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

SPB21N50C3 Documents

Infineon
D2PAK N-CH 500V 21A
Infineon
D2PAK N-CH 500V 21A
Infineon
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Infineon
For Lowest Conduction Losses & Fastest Switching
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