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Part Datasheet Search > MOSFETs > Infineon > SPD03N60S5BTMA1 Datasheet PDF
SPD03N60S5BTMA1
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SPD03N60S5BTMA1 Datasheet PDF (11 Pages)
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SPD03N60S5BTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Polarity
N-CH
Power Dissipation
38 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
3.2A
Rise Time
25 ns
Input Capacitance (Ciss)
420pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38W (Tc)

SPD03N60S5BTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SPD03N60S5BTMA1 Documents

Infineon
11 Pages / 0.87 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte

SPD03N60S5 Documents

Infineon
DPAK N-CH 600V 3.2A
Siemens Semiconductor
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN
Infineon
DPAK N-CH 600V 3.2A
Infineon
DPAK N-CH 600V 3.2A
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