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SPD04N80C3BTMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252-3

Description:

DPAK N-CH 800V 4A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

SPD04N80C3BTMA1 Datasheet (11 Pages)

Part Numbering System on1 Page

SPD04N80C3BTMA1 User Reference Manual Guide (270 Pages)SPD04N80C3BTMA1 Application Note (37 Pages)

SPD04N80C3BTMA1 Datasheet PDF (11 Pages)

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SPD04N80C3BTMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-252-3

Power Rating

63 W

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

1.1 Ω

Polarity

N-CH

Power Dissipation

63 W

Threshold Voltage

2.1 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Continuous Drain Current (Ids)

Rise Time

15 ns

Input Capacitance (Ciss)

570pF @25V(Vds)

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

63W (Tc)

View Datasheet >

SPD04N80C3BTMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Size-Length

6.5 mm

Size-Width

6.22 mm

Size-Height

2.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

SPD04N80C3BTMA1 Environmental

SPD04N80C3BTMA1 Function Overview

SPD04N80C3BTMA1 Documents

SPD04N80C3BTMA1 Datasheet

Infineon

11 Pages / 0.54 MByte

SPD04N80C3BTMA1 User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

SPD04N80C3BTMA1 Other Datasheet PDF

Infineon

52 Pages / 3.25 MByte

SPD04N80C3BTMA1 Application Note

Infineon

37 Pages / 2.01 MByte

SPD04N80C3 Documents

SPD04N80C3 Datasheet PDF

Infineon

DPAK N-CH 800V 4A

SPD04N80C3ATMA1 Datasheet PDF

Infineon

DPAK N-CH 800V 4A

SPD04N80C3BTMA1 Datasheet PDF

Infineon

DPAK N-CH 800V 4A

SPD04N80C3_08 Datasheet PDF

Infineon

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

SPD04N80C3XT Datasheet PDF

Infineon

DPAK N-CH 800V 4A

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