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Part Datasheet Search > High Voltage MOS > Infineon > SPD07N60C3ATMA1 Datasheet PDF
SPD07N60C3ATMA1
$ 0.395
SPD07N60C3ATMA1 Datasheet PDF (13 Pages)
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SPD07N60C3ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
83 W
Threshold Voltage
3 V
Input Capacitance
790 pF
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
7.3A
Rise Time
3.5 ns
Input Capacitance (Ciss)
790pF @25V(Vds)
Fall Time
7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83000 mW

SPD07N60C3ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm

SPD07N60C3ATMA1 Documents

Infineon
13 Pages / 0.8 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.27 MByte

SPD07N60C3 Documents

Infineon
DPAK N-CH 600V 7.3A
Infineon
N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
Trans MOSFET N-CH 600V 7.3A 3Pin(2+Tab) TO-252
Infineon
DPAK N-CH 600V 7.3A
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