$ 0.377

SPD08P06PG Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252

Description:

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SPD08P06PG Datasheet (9 Pages)

Package Outline Dimension on8 Page

SPD08P06PG Datasheet PDF (9 Pages)

View Datasheet

Click page to view the detail

SPD08P06PG Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-60.0 V

Current Rating

-8.80 A

Case/Package

TO-252

Polarity

P-Channel

Input Capacitance

420 pF

Gate Charge

15.0 nC

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

8.80 A

Rise Time

46 ns

Input Capacitance (Ciss)

420pF @25V(Vds)

Input Power (Max)

42 W

Fall Time

14 ns

View Datasheet >

SPD08P06PG Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Cut Tape (CT)

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

SPD08P06PG Environmental

SPD08P06PG Documents

SPD08P06PG Datasheet

Infineon

9 Pages / 0.58 MByte

SPD08P06 Documents

SPD08P06PGBTMA1 Datasheet PDF

Infineon

DPAK P-CH 60V 8.83A

SPD08P06P Datasheet PDF

Infineon

DPAK P-CH 60V 8.83A

SPD08P06P G Datasheet PDF

Infineon

Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252

SPD08P06PG Datasheet PDF

Infineon

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin

SPD08P06P Datasheet PDF

Siemens Semiconductor

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET