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SQD40N06-14L-GE3 Datasheet PDF - Vishay Intertechnology

Manufacturer:

Vishay Intertechnology

Case Package:

TO-252

Description:

Power Field-Effect Transistor, 40A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SQD40N06-14L-GE3 Datasheet (9 Pages)

SQD40N06-14L-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252

Drain to Source Resistance (on) (Rds)

0.011 Ω

Power Dissipation

75 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

60 V

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

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SQD40N06-14L-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

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SQD40N06-14L-GE3 Environmental

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SQD40N06-14L-GE3 Datasheet

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9 Pages / 0.15 MByte

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