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Part Datasheet Search > MOSFETs > Fairchild > SSP2N60B Datasheet PDF
SSP2N60B
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SSP2N60B Datasheet PDF (10 Pages)
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SSP2N60B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
5.00 Ω
Polarity
N-Channel
Power Dissipation
54 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
50 ns
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SSP2N60B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.7 mm
Size-Height
16.3 mm

SSP2N60B Documents

Fairchild
10 Pages / 0.95 MByte
Fairchild
10 Pages / 0.83 MByte

SSP2N60 Documents

Fairchild
600V N-Channel MOSFET
Fairchild
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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