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Part Datasheet Search > MOSFETs > ST Microelectronics > STB12NM50ND Datasheet PDF
STB12NM50ND
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STB12NM50ND Datasheet PDF (16 Pages)
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STB12NM50ND Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
380 mΩ
Polarity
N-CH
Power Dissipation
100 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
11A
Rise Time
15 ns
Input Capacitance (Ciss)
850pF @50V(Vds)
Input Power (Max)
100 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
100W (Tc)

STB12NM50ND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

STB12NM50ND Documents

ST Microelectronics
16 Pages / 0.99 MByte

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