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Part Datasheet Search > MOSFETs > ST Microelectronics > STB18NM60N Datasheet PDF
STB18NM60N
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STB18NM60N Datasheet PDF (21 Pages)
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STB18NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
0.26 Ω
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
13A
Rise Time
15 ns
Input Capacitance (Ciss)
1000pF @50V(Vds)
Input Power (Max)
110 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STB18NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB18NM60N Documents

ST Microelectronics
21 Pages / 1.14 MByte

STB18NM60 Documents

ST Microelectronics
D2PAK N-CH 600V 13A
ST Microelectronics
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